Abstract
A high-quality GaInAsSb epitaxial layer can be grown with a hole concentration of 8.5×1015 cm-3 at room temperature and a photoluminescence (PL) full width at half-maximum of 8.5 meV at 10 K. The 10 K PL wavelength peak of Te-compensated GaInAsSb layers shifts toward the high-energy side with increasing electron concentration, which is attributed to the Burstein-Moss effect. The AlGaSb/GaSb/GaInAsSb heterostructure has a very uniform elemental depth profile, sharp heterointerface, and high-quality epitaxial layers. The fabricated separate absorption and multiplication avalanche photodiodes, illuminated with a 1.9-µm-wavelength light source, exhibit a dark current of 55 µ A, a junction capacitance of 4 pF, and a multiplication factor of 9.6 at the reverse voltage of 1.5 V.
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