Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique

Abstract

Investigation into the effect of tantalum on silicon carbide, grown by the sublimation close space technique, was carried out. It was established that in the presence of a small piece of tantalum in the reaction space during the crystal growth process, the surface of the epitaxial layer became extremly smooth and high-crystal-quality epitaxial layers were obtained. It was also shown that the concentrations of aluminum and titanium are different in epitaxial layers grown with and without tantalum. High-quality epitaxial layers, which were comparable to epitaxial layers grown by chemical vapor deposition, could be obtained at a high growth rate by the sublimation close space technique.