Epitaxial growth of gallium arsenide thin films by spray pyrolysis using a single-source organometallic precursor

Abstract

Epitaxial films of gallium arsenide were grown on (100) GaAs at 520–540°C from the single source organometallic precursor [(n-Bu)2Ga(μ-As(t-Bu)2)]2 using a modified spray pyrolysis process. The epitaxial nature of the films was established by X-ray diffraction and Rutherford backscattering analyses. Secondary ion mass spectrometry analysis indicated an accumulation of carbon and oxygen at the film-substrate interface. Resistivity and Hall effect measurements suggest that the films are highly compensated.