Abstract
Epitaxial GaAs/NiAl/GaAs heterostructures consisting of buried NiAl layers and GaAs overlayers that are monocrystalline and well aligned have been fabricated by a combination of solid-phase reactions and molecular beam epitaxy. The structures have been characterized by reflection high-energy electron diffraction, electron microscopy, and ion channeling. The achievement of these stable and epitaxial buried-metal heterostructures makes possible the fabrication of metal-base and permeable-base transistors, buried interconnects, and buried ground planes.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
