Epitaxial growth of GaAs films on Cr-doped GaAs substrates by ionized Ga and As beam deposition

Abstract

Single crystalline GaAs films were grown by depositing ionixed Ga and As beams onto (100) oriented Cr-doped GaAs wafers heated to a temperature above 500°C in a vacuum of 10-6 Torr. There was a flux of neutral atoms in addition to the ionized atoms. The GaAs films grown with an appropriate condition had photoluminescence spectra similar to those taken on high-purity molecular beam epitaxial grown GaAs films; there were the large 1.515 and 1.49 eV emission bands and the small 1.46 eV emission band. The features of the photoluminescene spectra varied with the ratio of the intensity of the ionized As beam to that of the ionized Ga beams, ion energy and substrate temperature.