Abstract
In this study, the effect of a two-step n-AlGaN layer grown via high temperature metal organic chemical vapor deposition (HT-MOCVD) was investigated. The crystal and electrical characteristics of n-AlGaN over Al composition 60% are crucial for the high performance deep ultraviolet light emitting diode (DUV LED). The improvement in the crystal quality of the n-AlGaN is proved by inserting Al 83% n-AlGaN between Al 65% n-AlGaN and AlN using atomic force microscope, photoluminescence, high resolution X-ray diffraction and scanning transmission electron microscopy. The measurement of the Hall effect demonstrated the enhanced electrical properties of the n-AlGaN layer with two-step. Finally, we demonstrated a DUV LED with conventional and two-step n-AlGaN layers using HT-MOCVD. The optical power of the DUV LED with two-step n-AlGaN increased by a factor of three as compared to those of the DUV LED with conventional n-AlGaN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.