Abstract
In this study, the effect of a two-step n-AlGaN layer grown via high temperature metal organic chemical vapor deposition (HT-MOCVD) was investigated. The crystal and electrical characteristics of n-AlGaN over Al composition 60% are crucial for the high performance deep ultraviolet light emitting diode (DUV LED). The improvement in the crystal quality of the n-AlGaN is proved by inserting Al 83% n-AlGaN between Al 65% n-AlGaN and AlN using atomic force microscope, photoluminescence, high resolution X-ray diffraction and scanning transmission electron microscopy. The measurement of the Hall effect demonstrated the enhanced electrical properties of the n-AlGaN layer with two-step. Finally, we demonstrated a DUV LED with conventional and two-step n-AlGaN layers using HT-MOCVD. The optical power of the DUV LED with two-step n-AlGaN increased by a factor of three as compared to those of the DUV LED with conventional n-AlGaN.
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