Epitaxial growth and optical evaluation of gallium phosphide and gallium arsenide thin films on calcium fluoride substrate

Abstract

Epitaxial films of GaAs and GaP were grown on CaF 2 (111) surface by a molecular beam method. The optical transmittance between 0.5 and 6 eV has been measured at room temperature on samples less than 200 Å thick. The growth conditions of these films are discussed and the optical data are compared to those calculated from the bulk optical constants.