Abstract
The molecular beam method is a versatile experimental technique which may be used to grow high quality single crystal thin films in the range from 100A to several microns with precise control of uniformity and thickness. Films may be doped by an additional molecular beam containing the doping material simultaneously impinging on the substrate surface with the film molecular beams. Epitaxial GaAs thin films doped with silicon were grown by the molecular beam method in an ultrahigh vacuum system in which high energy electron diffraction and mass spectrometric measurements could be made during growth or by stopping growth momentarily. The crystallinity and beam intensity parameters of these films were thus studied during growth. The doping profiles and the amount of compensation were evaluated by the Schottky barrier diode method and the photo luminescence spectra.
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