Epitaxial CdTe films on GaAs/Si and GaAs substrates

Abstract

Epitaxial films of GaAs on (100)silicon were used as substrates for the preparation of high quality epitaxial layers of (100)CdTe, using a simple ultrahigh vacuum technique. Conditions were defined for the consistent formation of the (100)CdTe on (100)GaAs or GaAs/Si. Double crystal x-ray diffraction rocking curves for the GaAs films on Si have shown full width at half maximum as low as 20 s of arc. Both the CdTe and GaAs films are structurally stable to multiple thermal shocks between 80 K and room temperatures, and to elevated temperatures in the range of 400 to 600 °C.