Abstract
High electrical conductivity graphene/epitaxial-3C–SiC (G/epi-3C–SiC) composite films have the potential to the applications such as micro-electro-mechanical systems, distributed Bragg reflectors, solar cells, and photocatalysis in harsh environments. In this study, G/epi-3C–SiC composite films were prepared through laser chemical vapor deposition (LCVD) using hexametyldisilane (HMDS) as a safe single precursor. The electrical conductivity (σ) of the composite films reached 2.23 × 104 S/m, which is 2.2 times of the highest σ reported for G/epi-3C–SiC composite. The deposition rate (Rdep) of the composite film with the highest σ is 8.2 times of that of the G/epi-3C–SiC with the highest σ ever reported. σ of the pure epitaxial 3C–SiC film is only 81.2 S/m, which is the lowest value reported to date of 3C–SiC prepared through CVD using HMDS as a single precursor. Elimination of carbon is beneficial for increasing the breakdown field intensity and decreasing the leakage current of heterojunction when epitaxial 3C–SiC is used as semiconductor material.
Published Version
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