Laser chemical vapor deposition of SiC films with CO 2 laser

Abstract

SiC films were prepared by laser chemical vapor deposition using a CO 2 laser (maximum laser power: 245 W) with HMDS (hexamethyldisilane) precursor and the effects of deposition conditions on the phase, microstructure and deposition rate were investigated. At pre-heating temperature of 323 K and laser power ( P L) above 119 W (deposition temperature ( T dep) above 1410 K), (1 1 1)-oriented 3C SiC (β-SiC) films were obtained. With increasing T dep, the microstructure of these SiC films changed from glass-like ( T dep < 1460 K) to cauliflower-like ( T dep = 1460–1560 K) to granular ( T dep > 1560 K). Conical facets formed on the surface of granular SiC films at around T dep = 1650 K. The deposition rate ( R dep) of SiC films showed a maximum at T pre = 473 K and P L = 119 W ( T dep = 1490 K) and reached 2200 μm h −1.