Abstract
The structural and magnetic properties of Co 2MnSi (CMS) thin films epitaxially grown on GaAs substrates by sputtering were investigated. The CMS film directly grown on GaAs showed a cube-on-cube crystallographic relation, while it was rotated by 45° in the (0 0 1) plane when a thin MgO layer was inserted between the CMS and GaAs. The CMS film directly grown on GaAs showed strong magnetic anisotropy consisting of a uniaxial anisotropy with an easy axis of CMS [ 1 1 ¯ 0 ] (GaAs [ 1 1 ¯ 0 ] ) direction and a cubic anisotropy with easy axes of CMS〈1 1 0〉 directions. The uniaxial anisotropy was weakened in the samples with a MgO interlayer. The magnetization value of the CMS film with a 3.0-nm-thick MgO was approximately 820 emu/cm 3 (3.9μ B/f.u.) at room temperature, a value slightly higher (∼7%) than that of the sample without MgO.
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