Abstract
The structural, magnetic, and electrical properties of Co2MnSi (CMS)/MgO (0–3.0nm)∕n-GaAs tunnel junctions were investigated. CMS films with L21-ordered structures were grown epitaxially on GaAs. The crystallographic relations were CMS(001)[100]∥GaAs(001)[110] when a thin MgO interlayer was inserted between the CMS and the GaAs, and CMS(001)[110]∥GaAs(001)[110] when the CMS film was directly grown on GaAs without a MgO interlayer. The CMS film without a MgO interlayer showed strong magnetic anisotropy consisting of uniaxial anisotropy with an easy axis of CMS[1−10] (GaAs[1−10]) direction and cubic anisotropy with easy axes of CMS⟨110⟩ directions. The uniaxial anisotropy was weakened in the samples with a MgO interlayer. The magnetization value of the CMS film with a 3.0-nm-thick MgO layer was approximately 820emu∕cm3 (3.9μB∕f.u.) at room temperature (RT), a value slightly higher (∼7%) than that of the sample without MgO. The resistance value of the CMS/MgO (3.0nm)∕n-GaAs junction was approximately two to three orders of magnitude higher than that of the CMS∕n-GaAs junction at RT. The potential height and width of the tunnel barrier in the CMS∕MgO∕n-GaAs junction were estimated to be 0.6eV and 3.3nm, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
