Abstract
X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial CrN(001) grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67) and shown to have a N/Cr ratio of 1.04 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-chromium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/Cr ratio, as determined by XPS, of 0.63, a decrease of 29% of that determined from the as-deposited surface. This indicates a preferential removal of nitrogen from the sputtered layers.
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