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Abstract
X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial TiN(001) layers grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 850 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/Ti ratio of 1.02 ± 0.02 by Rutherford backscattering spectroscopy (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-titanium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II radiation. The sputter etched films were found to have a N/Ti ratio of 0.73, indicating a preferential removal of nitrogen.
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