Environment-Friendly Chemical Mechanical Polishing Slurry for SiC Wafer

Abstract

In order to avoid the environmental pollution and the harm to body of traditional polishing slurries, an environment-friendly chemical mechanical polishing technology is proposed for SiC wafer in this study. With this method, SiC material is removed by utilizing the strong oxidability of nanotitanium dioxide particles in chemical mechanical slurry in the existence of ultraviolet. While, the oxidbillity will recede in absence of ultraviolet when the polishing process finishes. On the basis of investigating in the reaction mechanism between SiC and nanotitanium dioxide, the slurries are prepared for the environment-friendly chemical mechanical polishing technology. The results show that the ultraviolet-assisted CMP slurry has strong oxidation for SiC material. This method is high-efficient for polishing SiC wafer. The surface roughness is reduced to about Ra 0.1μm from Ra 0.818μm after polishing for one hour.