Abstract
Power device using SiC material is expected as the next generation device which exceeds the limit of electrical power compared to devices using conventional Si material. SiC crystal damage induced by the ion implantation is reduced by heating the wafer to the high temperature during implantation. We developed the high temperature ion implanter “IMPHEAT” for mass production of 6 inch SiC wafers. IHC (Indirectly Heated Cathode) ion source was installed to get aluminum beam efficiently. Improved ion source can generate higher aluminum beam current. Triple charged ion can achieve 960 keV energy. To handle the SiC wafer on high-temperature platen stably and keep SiC wafer 500deg C, we have improved the high temperature electro static chuck and have verified the handling sequence.
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