Abstract
Rutherford backscattering spectrometry and spreading resistance techniques have been used to determine the concentration profiles of gold implanted on and diffused in p-type silicon. The measurement of the gold concentration is possible by the solution of the charge neutrality condition and thus it requires the determination of the entropy factor X associated with the ionization of the gold donor level. The value of 28±2 compares well with the latest determination of X obtained by using rather complex techniques.
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