Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors.

Abstract

In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented. Our device exhibits a low breakdown voltage (VBR) of ∼ −10 ± 2.5 V under dark, photocurrent gain (M) varying from 20 in linear mode to avalanche gain of 700 at VBR at a 1.064 μm wavelength. Positive temperature dependence of breakdown voltage ∼ 12.6 mV K−1 further affirms avalanche breakdown as the gain mechanism in our SACM NW APDs. Capacitance–voltage (C–V) and temperature-dependent noise characteristics also validated punch-through voltage ascertained from I–V measurements, and avalanche being the dominant gain mechanism in the APDs. The ensemble SACM NW APD device demonstrated a broad spectral room temperature response with a cut-off wavelength of ∼1.2 μm with a responsivity of ∼0.17–0.38 A W−1 at −3 V. This work offers a potential pathway toward realizing tunable nanowire-based avalanche photodetectors compatible with traditional Si technology.