Enlargement of omnidirectional electronic gap in the graphene superlattice heterostructures with Gaussian profile potential voltages

Abstract

A valid method is used to extend the omnidirectional electronic gap (OEG) of Gaussian gapped graphene superlattices (GSLs) heterostructure. The heterostructure consists of two superlattices with different width ratios of potentials. Each superlattice comprises a periodic repetition of a unit cell consisting of 21 layers with the potential voltages varying according to a Gaussian function and another layer with a fixed potential voltage. The potential width ratios of constituent Gaussian gapped GSL are established utilizing the lower and upper energy edges of omnidirectional electronic gap depending on the width ratio of potentials. Moreover, it is shown that the width of OEG of the heterostructure is sensitive to lattice constant, which can be applicable to the development of graphene-based electronics.