Abstract

Electron transmission through different non-conventional (non-uniform barrier height) gated and gapped graphene superlattices (GSLs) is studied. Linear, Gaussian, Lorentzian and Pöschl-Teller superlattice potential profiles have been assessed. A relativistic description of electrons in graphene as well as the transfer matrix method have been used to obtain the transmission properties. We find that it is not possible to have perfect or nearly perfect pass bands in gated GSLs. Regardless of the potential profile and the number of barriers there are remanent oscillations in the transmission bands. On the contrary, nearly perfect pass bands are obtained for gapped GSLs. The Gaussian profile is the best option when the number of barriers is reduced, and there is practically no difference among the profiles for large number of barriers. We also find that both gated and gapped GSLs can work as omnidirectional band-pass filters. In the case of gated Gaussian GSLs the omnidirectional range goes from −50° to 50° with an energy bandwidth of 55 meV, while for gapped Gaussian GSLs the range goes from −80° to 80° with a bandwidth of 40 meV. Here, it is important that the energy range does not include remanent oscillations. On the light of these results, the hole states inside the barriers of gated GSLs are not beneficial for band-pass filtering. So, the flatness of the pass bands is determined by the superlattice potential profile and the chiral nature of the charge carriers in graphene. Moreover, the width and the number of electron pass bands can be modulated through the superlattice structural parameters. We consider that our findings can be useful to design electron filters based on non-conventional GSLs.

Highlights

  • Semiconductor superlattices are essential as injector and/or active region in several applications

  • A possible strategy to improve the quality of stop and pass bands in a specific energy range is to increase the number of barriers, see the results for N = 21

  • We show that the chiral nature of the charge carriers in graphene as well as the superlattice potential profile are essential for good band-pass filtering

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Summary

Introduction

Semiconductor superlattices are essential as injector and/or active region in several applications. Since its seminal proposal[3,4], semiconductor superlattices with Gaussian potential profile are regarded as the archetypal structure to obtain flat stop and pass bands with nearly 100% reflection and transmission probability. The common factor in all these studies is the use of the Gaussian profile or alike profiles to create nearly perfect stop and pass bands. Under this context, a possible electronics based on cutting-edge materials like graphene will need efficient devices that act as injector, collector and/or active region. To get the stop-band enlargement it is fundamental that the bandgaps of the constituent superlattices overlap Another possibility are aperiodic and non-conventional gapped graphene heterostructures[29,30,31]. Some works claim that Gaussian superlattices are the best for band-pass filtering[3], others say that there is nothing special with the Gaussian profile and that any potential with smooth variation can serve as good band-pass filter[7,30]

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