Abstract
AbstractWe fabricated a highly efficient bismuth vanadate (BiVO4)‐based photoanode by constructing a W:BiVO4/Mo:BiVO4 homojunction configuration. It was confirmed that, in the case of Type‐II junction, the photocurrent density was drastically enhanced and the onset potential was cathodically shifted. The origins of the enhanced photo‐electrochemical performance could be attributed to the improvement of the charge separation efficiency, which resulted from both the built‐in electric field and Fermi level unpinning, achieved by the homojunction and Mo doping, respectively.
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