Abstract
The degradation behaviors of the electrical and the optical properties of organic light-emitting devices (OLEDs) fabricated with an emitting layer (EML) doped with or without a wide-bandgap-impurity were investigated. The OLEDs with a wide-bandgap-doped Alq 3 EML were more stable than those with an undoped Alq 3 EML. The existence of the doped wide-bandgap-impurity in the EML decreased the trap-charge density in the EML, resulting in an increase in the number of electrons in the Alq 3 EML. That increases in the number of electron in the Alq 3 EML for the OLEDs with a wide-bandgap-impurity decreased the staying time of the holes in the Alq 3 EML, resulting in an enhanced lifetime for the OLEDs. These results indicate that OLEDs with a wide-bandgap-impurity-doped EML hold promise for potential applications in long-lifetime OLED displays.
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