Abstract
We prepared pure BiFeO3 (BFO) and (Bi0.9Eu0.1)(Fe0.975Zn0.025)O3-δ (BEFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BEFZO thin film. The leakage current density of the BEFZO thin film was three orders of magnitude lower than that of the pure BFO, 3.93 × 10−6 A/cm2 at 100 kV/cm. The remnant polarization (2Pr) and the coercive electric field (2Ec) of the BEFZO thin film were 42 µC/cm2 and 898 kV/cm at an applied electric field of 1000 kV/cm and at a frequency of 1 kHz and the values decreased with increasing measurement frequency to 18 µC/cm2 and 866 kV/cm at 10 kHz, respectively. Also, the fatigue endurances were evaluated at peak voltages of 8–10 V after 1.44 × 1010 cycles in the BEFZO thin films and were 70 ∼ 90% of the initial values. We also confirmed that the 2Pr was fairly saturated at measurement frequency about 30 kHz for the BEFZO thin film.
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