Abstract
Several properties of Al-doped Zn0.95Co0.05O thin films prepared by radio frequency (RF) magnetron co-sputtering havebeen systematically investigated. The experimental results indicate thatCo2+ steadily substitutes for tetrahedrally coordinatedZn2+ in the ZnO wurtzite lattice without any segregated secondary phase formation,and that a trace amount of additional Al doping has a profound influence onthe enhancement of electrical and magnetic properties of Co:ZnO films. All thefilms show room-temperature ferromagnetism, and a giant magnetic moment of3.36 μB/Co is obtainedin the Zn0.948Co0.05Al0.002O thin film. The ferromagnetic ordering is seen to be correlated with the structural defects.Moreover, a phenomenon of band gap broadening and absorption edge blueshift can beachieved by additional Al doping into the Co:ZnO films.
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