Abstract
To reveal the origin of magnetic coupling in dilute magnetic semiconductors (DMSs), this article utilized high magnetic field (HMF) in the process of oxidizing Co/Zn bilayers to study the influence of Co clusters and oxygen vacancy (Vo) content control on magnetic and electrical properties of Co doped ZnO (Co-ZnO) films. Results indicated that HMF can suppress the diffusion of Co and remain the content of Co clusters compared with oxidation growth in the absence of HMF. Moreover, HMF promoted the oxidation of Zn, improved the crystallinity in the films, and lowered the content of Vo. Consequently, the resistivity of the films oxidized in HMF was decreased by 50%, while both the saturation magnetization and coercivity were increased by 100%. This indicates that contribution of more Co clusters to the magnetic properties of the films is greater than that of Vo.
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