Abstract
Au/PN/sub x//InP Schottky junctions have been formed using sophisticated in situ multistep plasma process. An effective barrier height as high as 0.83 eV has been achieved for Au/PN/sub x//InP Schottky diodes. The true barrier height estimated from the Richardson plot was 0.57 eV. This suggests that the surface Fermi level pinned at 0.39 eV below the conduction band edge for conventionally prepared Au/InP Schottky junctions is weakened in plasma-treated Au/PN/sub x//InP Schottky junctions. The effective barrier is enhanced by the effects of both the metal-insulator-semiconductor structure and weakened pinning of the surface Fermi level.
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