Abstract

Silicon (Si) nanostructures that exhibit a significantly low reflectance in ultraviolet (UV) and visible light wavelength regions are fabricated using a hydrogen etching process. The fabricated Si nanostructures have aperiodic subwavelength structures with pyramid-like morphologies. The detailed morphologies of the nanostructures can be controlled by changing the etching condition. The nanostructured Si exhibited much more reduced reflectance than a flat Si surface: an average reflectance of the nanostructured Si was approximately 6.8% in visible light region and a slight high reflectance of approximately 17% in UV region. The reflectance was further reduced in both UV and visible light region through the deposition of a poly(dimethylsiloxane) layer with a rough surface on the Si nanostructure: the reflectance can be decreased down to 2.5%. The enhancement of the antireflection properties was analyzed with a finite difference time domain simulation method.

Highlights

  • Antireflection (AR) techniques have been widely used in various applications such as solar cells [1,2,3], electro-optical devices [4], sensors [5], and lenses [6] to significantly suppress the reflective loss at the interface of two media

  • As the flow rate is increased, non-regular Si nanostructures were formed: pyramid-like nanostructures were produced at 0.5 sccm (Figure 2a) and 2.5 sccm (Figure 2b), but aggregates of nanoparticles were fabricated on the surface at 5.0 sccm (Figure 2c)

  • At annealing temperatures from 1,200°C to 1,350°C, pyramid-shaped Si nanostructures were formed by hydrogen etching

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Summary

Introduction

Antireflection (AR) techniques have been widely used in various applications such as solar cells [1,2,3], electro-optical devices [4], sensors [5], and lenses [6] to significantly suppress the reflective loss at the interface of two media. Despite excellent conversion efficiency in crystalline Si solar cells, the high refractive index (n = 3.4) of Si has limited the efficient utilization of sunlight [7,8]. This is because more than 30% of incident sunlight is scattered or reflected from the Si surface due to a large discontinuity of n between the air and Si interface. Nature has its own strategy to effectively reduce reflection: for example, nanostructured surface on a moth eye [6,9].

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