Abstract
A metal–insulator–metal structure resistive switching device based on H0.5Z0.5O2 (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar resistive switching (RS) behaviors with an extremely high OFF/ON ratio over 5400. The retention property had no degradation at 6 × 104 s. The current–voltage characteristics of the HZO samples showed a Schottky emission conduction in the high voltage region (Vreset < V < Vset), while at the low voltage region (V < Vreset), the ohmic contact and space charge limited conduction (SCLC) are suggested to be responsible for the low and high resistance states, respectively. Combined with the conductance mechanism, the RS behaviors are attributed to joule heating and redox reactions in the HZO thin film induced by the external electron injection.
Highlights
Resistive switching (RS) devices based on various binary transition metal oxides, such asTiO2 [1,2,3], NiOx [4,5], ZnO [6,7], HfO2 [8,9,10,11,12], ZrO2 [13,14,15,16], etc., have been extensively studied for their great potential as excellent substitutes in non-volatile memory applications
When a positive electrical stress was applied to the HRS sample, the current increased to the compliance current abruptly, while the device switched to LRS
The reset process was achieved by sweeping the voltage from zero to the Vreset, which mainly ranges from 0.7 to 0.9 V to switch the device from LRS to HRS
Summary
Resistive switching (RS) devices based on various binary transition metal oxides, such asTiO2 [1,2,3], NiOx [4,5], ZnO [6,7], HfO2 [8,9,10,11,12], ZrO2 [13,14,15,16], etc., have been extensively studied for their great potential as excellent substitutes in non-volatile memory applications. HfO2 - and ZrO2 -based thin films have been extensively used as promising “high-k” substitutes for integrated oxide gate dielectrics driven by the tendency of down-scale in complementary metal–oxide–semiconductor (CMOS) applications [19]. HfO2 -based thin films usually demonstrate a bipolar resistive switching behavior and need a negative polarity power supply support, while ZrO2 -based thin films resistive switching devices typically have a poor uniformity behavior, which remains an obstacle for their application. Both RS behaviors operate with a relatively small OFF/ON ratio of the HfO2 or ZrO2 thin films.
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