Abstract
The stability of nickel germanosilicide formed on Ni thin films on Si0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si–Ge layer. Agglomeration of polycrystalline Ni(Si1−xGex) is retarded by 100°C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si1−xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1−xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.
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