Abstract
A huge Rashba splitting enhanced by an in-plane magnetic field is observed in non-magnetic InGaAs resonant tunneling diodes with GaAsSb barriers. At T = 4 K, the current resonances split by the Rashba effect reveal peak to valley ratios up to 2.5:1 and the energy spacing between the split peaks reaches 30 meV at B = 5 T. The observed peak splitting can be observed at temperatures up to T = 180 K and higher. The Rashba parameters determined on four different samples are between α = 0.38 eVÅ and α = 0.78 eV Å, which are consistent with theoretical values reported for InAs quantum wells under external electric fields.
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