Abstract
A large resonance splitting is seen when an in-plane magnetic field is applied in non-magnetic InGaAs/GaAsSb/InGaAs resonant tunneling diodes (RTDs). The peak splitting can be explained in terms of the Rashba effect, which is enhanced by the in-plane acceleration that the electrons suffer under the action of the magnetic field. The Rashba splitting reaches values up to 30 meV for B = 5 T and stands temperatures above T = 180 K. The resonance peak splitting provides a new method to determine the Rashba parameter (α). The measured Rashba parameter in these RTDs range from α = 0.38 eVA to α = 0.78 eVA.
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