Abstract
Polarization switching and energy storage properties of highly (100) oriented antiferroelectric (AFE) (Pb,La)(Zr,Ti)O3 thin films (≤250 nm) deposited via a sol-gel process with both LaNiO3 and Pt top electrodes were investigated. By using LaNiO3 top electrodes, the energy density as well as energy efficiency can be enhanced by 4.6 J/cm3 and 11%, respectively. Furthermore, the films with LaNiO3 top electrodes are more capable of providing high energy density over a wide temperature regime above room temperature compared to Pt. This work clearly highlights that oxide top electrodes can greatly improve the energy storage performance of antiferroelectric thin film capacitors.
Published Version
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