Abstract
The effect of fluorine (F) treatment on operation of back-channel-etched (BCE), inverted staggered amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) is investigated. The F, in the form of ammonium fluoride (NH4F), is mixed with a hydrogen peroxide (H2O2)-based wet-etchant that is used to pattern source/drain Mo electrodes. X-ray photoelectron spectroscopy and secondary ion mass spectrometry reveal that the F penetrates into the a-IGZO bulk, effectively decreasing the concentration of surface hydroxyl groups that may, otherwise, be formed in abundance due to the presence of H2O2. As a consequence, device-to-device uniformity and operation of the BCE a-IGZO TFTs improves after the F treatment: The turn-on voltage changes from −0.6 ± 0.2 V to 0.6 ± 0.4 V, field-effect mobility increases from 12 ± 1 cm2/V·s to 15 ± 1 cm2/V·s, and subthreshold-voltage swing decreases from 368 ± 50 mV/dec to 360 ± 30 mV/dec.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
