Enhanced Nitrogen Monoxide Gas-Sensing Performance of Ti-Doped ZnO Nanostructures By SILAR

Abstract

Fig. 1. Schematic illustration of SILAR fabrication process [1].The use of semiconducting metal oxides to develop highly sensitive NO gas sensors remains an important approach in the field of gas sensing applications [2]. In this research, we describe the synthesis, characterization, and application of a very promissing NO gas sensing material ZnO doped with different atomic percentages of Ti and prepared by a simple SILAR [3] method. Synthesized specimens were structurally and morphologically characterized. The NO sensing characteristics of pristine ZnO and Ti-doped ZnO were compared using a gas sensing measurement system. The sensitivity, operating temperature, and response/recovery time were systematically investigated based on the change in electrical resistance of the materials in the presence of NO. Experimental results confirmed that 50 at% Ti-doped ZnO showed a maximum response to NO gas at an operating temperature. The sensing mechanism of the pristine and Ti-doped ZnO nanostructures is discussed in detail. We believe that the Ti-doped, flower-like ZnO nanostructure is a potential material for semiconductor-oxide-based NO gas sensors. Key words: NO gas sensor, SILAR method, flower-like, Ti-doped ZnO. Acknowledgement This research was supported by the research grant 021220FD2201 “Development of highly sensitive MOS based nano-film gas sensors” from Nazarbayev University. Reference [1] B. Soltabayev, M.A. Yıldırım, A. Ateş, S. Acar, The effect of indium doping concentration on structural, morphological and gas sensing properties of IZO thin films deposited SILAR method, Mater. Sci. Semicond. Process. 101 (2019) 28–36. https://doi.org/10.1016/j.mssp.2019.05.026.[2] V.S. Bhati, M. Hojamberdiev, M. Kumar, Enhanced sensing performance of ZnO nanostructures-based gas sensors: A review, Energy Reports. 6 (2020) 46–62. https://doi.org/10.1016/j.egyr.2019.08.070.[3] T. Çorlu, I. Karaduman, M.A. Yildirim, A. Ateş, S. Acar, Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films, J. Electron. Mater. 46 (2017) 3995–4002. https://doi.org/10.1007/s11664-017-5503-z. Figure 1