Abstract
This paper reports a simple process to enhance the extraction efficiency of photoluminescence from Eu-doped yttrium oxide (Y2O3: Eu3+) thin-film phosphor. The two-dimensional (2D) SiO2 photonic crystal layer was fabricated by vacuum nano-imprint method using a conventional spin-on dielectric solution as a nano-imprint resin and a 2D patterned Si stamp. The applied pressure and temperature of the patterning and annealing process facilitates the conversion of the spin-on dielectric solution into a SiO2 hemisphere structure resulting in high definition transfer of the 2D reverse pattern of the Si mold. The light extraction efficiency of the Y2O3: Eu3+ thin-film phosphor assisted by 2D SiO2 photonic crystal layer was approximately 1.72 times higher than that of the conventional Y2O3: Eu3+ thin-film phosphor.
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