Abstract
In this study, NiO–PbZrO3 composite films were deposited on SiO2/Si substrates buffered with LaNiO3 films via the sol-gel coating technique. The effects of NiO addition in PZO thin films on the microstructure, dielectric properties, leakage mechanism, ferroelectric properties and energy storage properties have been discussed. The dielectric constant increased with the addition of NiO, while the leakage current density decreased. Compared with pure PZO films, the maximum polarization of the composite films was improved. For the composite films prepared using the NiO precursor solution with 0.05 mol/L, the recoverable energy storage density of the NiO-PZO composite film is up to 19.6 J/cm3 under the electric field of 1038 kV/cm, which is 30% higher than that of the pure PZO film under the same conditions. Also, the energy storage efficiency of the composite film reaches 48%. Accordingly, we demonstrate a simple and convenient method by adding NiO to fabricate thin films with high energy storage performance.
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