Abstract
High-performance transparent quantum-dot light-emitting diodes (TQLEDs) are achieved through fine-tuning the top dielectric/metal/dielectric (DMD) anode structure. The transparent DMD electrodes are utilized as both the bottom cathode and top anode of TQLEDs. Employing WOx/Ag/WOx DMD anodes serves a dual purpose of transparency and hole injection, thereby streamlining the TQLED design. Investigation into the effects of the thicknesses of WOx and Ag layers on the device characteristics reveals an optimal configuration of 10-nm WOx/27-nm Ag/40-nm WOx for the DMD anode. The resulting TQLED exhibits a remarkable device light transmittance of 47 % at 530 nm. With maximum bottom and top emission current efficiencies of 34.0 and 9.42 cd/A, respectively, the total emission obtained by summing the bottom and top emissions reaches the maximum current efficiency of 41.8 cd/A, surpassing that of conventional opaque quantum-dot light-emitting diodes. This advancement underscores the successful fabrication of TQLEDs boasting higher efficiency alongside substantial light transmittance.
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