Abstract
Substantially improved uniformity and enhanced electron field emission properties of hydrogen-free diamond-like carbon (DLC) films were obtained using a titanium intermediate layer after the annealing process. Large emission current densities of 2.08 mA cm-2 at 14.3 V µm-1 and 7.20 mA cm-2 at 25.7 V µm-1 were achieved for DLC/Ti/Si film annealed at 430 °C for 0.5 h. Its field emission was much more uniform than that of as-prepared DLC/Ti/Si and DLC/Si films. Secondary ion mass spectroscopy (SIMS) showed that C has been amply diffused into the Ti layer. An x-ray photoelectron spectroscopy (XPS) spectrum of the annealed DLC/Ti/Si film after 10 min of argon ion sputtering showed the formation of TiC at the interface between the DLC and Ti/Si substrate. This interaction and interdiffusion of C and Ti could significantly lower the Schottky barrier height between the DLC and Ti/Si substrate. The result was that electrons induced from the Ti/Si substrate can be easily penetrated into DLC films, which enhances the field emission properties.
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