Abstract
The field emission (FE) properties of diamond-like carbon (DLC) films grown by a microwave plasma chemical vapor deposition technique were investigated by changing the sp 2/sp 3 bonding ratios and the surface morphology of the films. The sp 2/sp 3 bonding ratios were evaluated by Raman scattering spectroscopy, and it was found that the DLC films were composed of crystalline graphite with sp 2 bonding and amorphous carbon with sp 2 and sp 3 bonding. It was also found that the sp 2/sp 3 ratios increased with decreasing substrate temperature ( T g) during growth. The turn-on electric field ( F T) values (defined as the low-end electric field to emit electrons) showed a U-shaped dependence on the sp 2/sp 3 bonding ratio. Although the surface morphology of the DLC films was sensitive to T g, it did not strongly affect the FE properties. By optimizing the growth conditions, a F T value as small as 10 V μm −1 was obtained for the DLC film.
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