Abstract
Pure BiFeO3 (BFO) and Gd-transition metal co-doped (Bi0.9Gd0.1)(Fe0.975B0.025)O3±δ (B = Ni, Mn, Cu, Ti, and V, denoted by BGdFNi, BGdFMn, BGdFCu, BGdFTi, and BGdFV) films were deposited by using a chemical solution deposition. Enhanced electrical properties were observed for the co-doped films. The BGdFMn film showed the largest 2Pr value (105.3 μC/cm2 at 1470 kV/cm) and the smallest leakage current density (1.49 × 10−5 A/cm2 at 100 kV/cm). The enhanced electrical properties for the co-doped films are related to the decrease of oxygen vacancies, the stabilization of perovskite structure, and the lattice distortion by the doping elements.
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