Abstract
W-doped Na0.5Bi0.5TiO3 (NBTW) thin films with different solution concentrations of 0.05, 0.10, 0.20 and 0.40 M were deposited on indium tin oxide/glass substrates via chemical solution decomposition combined with sequential layer annealing. The role of precursor solution concentration on microstructure and dielectric tunability was mainly studied. All films crystallize into the single perovskite structures with an obvious difference in relative intensities of all peaks. The ratio of the (l00) and (110) diffraction peaks intensity reaches to the maximum value for the 0.10 M-film. Compared with the other films, the NBTW film prepared from 0.10 M exhibits the low leakage current due to the relatively dense microstructure with uniform grain size. Besides, a high dielectric tunability of 53 % and figure of merit of 11.5 for the NBTW film derived from 0.10 M precursor solution can be obtained at ±8 V and 100 kHz. These results suggest that the appropriate concentration of precursor solution is of great significance for enhancing the dielectric performance of NBTW thin film.
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