Abstract
Na0.5Bi0.5TiO3 (NBT) thin films were fabricated on the indium tin oxide/glass substrates via a chemical solution deposition method by using different precursor solutions. Results show that the precursor solution has a remarkable influence on the crystallinity, morphology, insulating and dielectric properties of NBT thin films. Especially, the NBT thin film annealed at 500 °C from the precursor solution with acetates dissolved in 2-methoxyethanol and acetic acid shows optimal electrical properties, reflected by the reduced leakage current density, the maximum tunability of 23%, a high dielectric constant of 207 and a low dielectric loss of 0.05 as well as a large figure of merit of 4.6 at 100 kHz.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
