Abstract
A new type of T-shaped quantum wire, based on a strained asymmetric structure, has been grown and characterised. A narrow GaAs well is overgrown on an multi quantum well structure consisting of wide InAlGaAs wells with Al 0.3Ga 0.7As barriers. Since the lattice constants of the InAlGaAs wells and bulk GaAs are different, the overgrown well is strained at the T-shaped intersection. The influence of the strain on the confinement energy is investigated by comparison with similar unstrained asymmetric structures and calculated values. A strain-induced enhancement of the confinement energy of 5–10 meV is found for In molefractions of 10% and 15% in the multi quantum wells. For an In mole fraction of 20% no quantum wire states are observed, probably due to dislocation formation in the overgrown layers.
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