Abstract
In this paper, a deep ultraviolet light-emitting diode (DUV LED) at ∼275 nm with an interval-graded barrier superlattice (IBSL) Electron Blocking Layer (EBL) has been proposed and numerically investigated. The IBSL EBL structure has greatly increased the carrier concentration within the active region. It has been shown that DUV LEDs with IBSL EBL structure exhibits transcendent electron blocking and hole injection capabilities compared to conventional DUV LEDs, which is attributed to the increased lattice matching and decreased polarization effects brought about by the smaller Al content difference between the superlattice barriers and wells. Consequently, compared to the conventional DUV LEDs at a 60 mA injection current, the internal quantum efficiency and the light output power of DUV LEDs with IBSL EBL have been enhanced by 34 % and 30 %, respectively.
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