Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer

Abstract

The performance of N-face AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with superlattice electron blocking layer (EBL) is investigated by using two-dimensional numerical simulation. The simulated results demonstrate that the adoption of N-face UV LED with superlattice EBL is critical to improve the device’s performance. In comparison with the Ga-face UV LEDs with superlattice and conventional EBL, the N-face device structure with superlattice EBL possesses numerous advantages. By detailedly analyzing the profiles of energy band diagrams, distribution of carrier concentration, and radiative recombination rate, the advantages of N-face UV LED with superlattice EBL are attributed to the higher barrier for electron leakage, and simultaneously reduced barrier for hole injection compared with conventional Ga-face UV LEDs.