Abstract
In this work, we present our two-dimensional numerical simulation studies and analysis of the enhanced breakdown and self-heating characteristics of a new collector-tub three-zone step doped thin-film lateral bipolar transistor (CT-SLBT) on silicon-on-insulator (SOI), which shows enhanced breakdown voltage as high as 80% when compared with that of the conventional uniformly doped lateral bipolar transistor (LBT) on SOI. The design issues and the reasons for the improved performance are discussed in detail.
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