Abstract
The novel features of a fully depleted (FD) dual-material gate (DMG) SOI MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET. The two-dimensional (2-D) numerical simulation studies demonstrate the novel features as threshold voltage roll-up and simultaneous transconductance enhancement and suppression of short-channel effects (SCE' s) offered by the DMG SOI MOSFET. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate material. This work illustrates the benefits of high performance DMG SOI MOS devices over their single material gate (SMG) counterparts and provides an incentive for their experimental exploration.
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