Enhance Carrier Density Distributions between Double Quantum Wells Violet Ingan Laser Diode by Using Alingan as a Blocking Layer

Abstract

Enhancement of carrier (electron and hole) density distributions between double quantum wells (QWs) violet InGaN laser diode (LD) has numerically been obtained by using quaternary AlInGaN as a blocking layer (BL) instead of conventional ternary AlGaN BL. Simulation results indicate that the quaternary BL has a higher refractive index and optical intensity inside the active region than the ternary BL which leads to reducing the threshold current of the LD from 16.42 mA with ternary BL to 13.67 mA with quaternary BL.