Abstract
Although of the potential advantages of quaternary AlInGaN as a blocking layer (BL) in double quantum well (QW) violet InGaN laser diode (LD), simulation results indicated that the temperature characteristic ( T o value) of the LD with a quaternary AlInGaN BL is lower than the T o value of the LD with a conventional ternary AlGaN BL, whereas the T o value of the LD with quaternary AlInGaN BL is 180 K and the T o value with ternary AlGaN BL it is 194 K. This is due to the enhance carrier holes distribution between the double QWs with using the quaternary BL.
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